Electronics

Statistical Simulation of Integrated Circuits
 
Description
This research aim to develop:
  • statistical device modeling useful in technology optimization;
  • some methodologies for the statistical design flow of Integrated Circuits subject to statistical technological tolerances with particular attention to device mismatch.

The main qualifying points of this research are:

  1. Experimental CMOS process characterization and statistical modeling.
  2. Statistical circuits simulations and yield optimization for IC statistical design.
  3. Implementation of the tool SiSMA for statistical simulation of MOS ICs using a non-Montecarlo approach.
Laboratory: Microelectronics Lab. at DII
Contact PersonClaudio Turchetti
People: